01.49
Blogntech
Abstract:
A simple model of temperature dempendence of current in MOS capacitors after quasi breakdown was obtained. In developing the simple model, it was assumed that electron traps are created in the oxide layer during high electric field injection of electrons.
Further assumptions were that transport of electrons from one trap to another accurs due to an activate process of motion and the traps have an exponential distribution in energy. The results calculated using the model fit well the measured data.
Keywords: electron traps, electron injection, activated process, quasi breakdown.
Fatimah A. Noor and Khairurrijal
Department of Pyhsics, Bandung Institute of Technology
Jalan Ganesa 10 Bandung 40132, Indonesia
E-mail: krijal@fi.itb.ac.id
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